symbol v ds v gs i dm t j , t stg symbol typ max 30 40 61 75 r q jc 4.5 6 absolute maximum ratings t a =25c unless otherwise noted 6.1 pulsed drain current b 20 12 gate-source voltage drain-source voltage power dissipation a r q ja =75c/w t a =25c w p dsm 1.6 continuous drain current r q ja =75c/w maximum units parameter t a =25c t a =70c i d 7.7 v t 10s r q ja c/w a 30 junction and storage temperature range c -55 to 150 t a =70c 1.0 maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a maximum junction-to-ambient a steady-state c/w AON5810 features v ds (v) = 20v i d = 7.7 a (v gs = 4.5v) r ds(on) < 18 m w (v gs = 4.5v) r ds(on) < 19 m (v gs = 4.0v) r ds(on) < 21 m (v gs = 3.1v) r ds(on) < 25 m w (v gs = 2.5v) r ds(on) < 40 m w (v gs = 1.8v) esd rating: 2000v hbm general description the AON5810 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. standard product AON5810 is pb-free (meets rohs & sony 259 specifications). AON5810l is a green product ordering option. AON5810 and AON5810l are electrically identical. top view bottom view d1/d2 dfn 2x5 g1 s1 s1 g2 s2 s2 g1 s1 s1 g2 s2 s2 g1 d1 s1 g2 d2 s2 common-drain dual n-channrl enhancement mode field effect transistor www.freescale.net.cn 1/4
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.73 1 v i d(on) 30 a 11 14 18 t j =125c 16 21 26 v gs =4.0v, i d =6a 11 14.5 19 m w v gs =3.1v, i d =6a 13 16.7 21 m w v gs =2.5v, i d =5a 15 20 25 m w 25 32 40 m w g fs 28 s v sd 0.5 0.74 1 v i s 2.5 a c iss 1360 pf c oss 200 pf c rss 178 pf r g 1.5 w q g (4.5v) 13.1 nc q gs 2 nc q gd 3.9 nc t d(on) 6.2 ns t r 11 ns t d(off) 40.5 ns t f 10 ns t rr 18.8 ns q rr 8.1 nc body diode reverse recovery charge i f =7.7a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.4 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time v gs =4.5v, v ds =10v, i d =7.7a gate source charge gate drain charge total gate charge switching parameters m w i s =1a,v gs =0v v ds =5v, i d =7.7a v gs =1.8v, i d =4a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =16v, v gs =0v v ds =0v, i g =250ua v ds =0v, v gs =10v zero gate voltage drain current gate-body leakage current body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =7.7a reverse transfer capacitance i f =7.7a, di/dt=100a/ m s v gs =0v, v ds =10v, f=1mhz gate-source breakdown voltage a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. the current rating is based on t he t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 1: sep. 2007 AON5810 www.freescale.net.cn 2/4
typical electrical and thermal characteristics 0.5 1 0 5 10 15 20 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =2.5v v gs =1.8v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =7.7a v gs =10v i d =8a v gs =2.5v i d =5a v gs =1.8v i d =4a 0 10 20 30 40 50 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.7a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 6v 2.5v 10v 4v 3v AON5810 www.freescale.net.cn 3/4
typical electrical and thermal characteristics 0.5 1 0 1 2 3 4 5 0 3 6 9 12 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 600 1200 1800 2400 0 5 10 15 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q q q q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 1ms dc r ds(on) limited t j(max) =150c, t a =25c 10ms 100ms 1s 10s v ds =10v i d =7.7a a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s AON5810 www.freescale.net.cn 4/4
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